All IGBT. MG12150S-BN2MM Datasheet

 

MG12150S-BN2MM IGBT. Datasheet pdf. Equivalent


   Type Designator: MG12150S-BN2MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Qgⓘ - Total Gate Charge, typ: 1400 nC
   Package: MODULE

 MG12150S-BN2MM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG12150S-BN2MM Datasheet (PDF)

 ..1. Size:1343K  littelfuse
mg12150s-bn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAg

 7.1. Size:547K  littelfuse
mg12150d-ba1mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150D-BA1MMFeatures Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

 7.2. Size:1452K  littelfuse
mg12150w-xn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 8.1. Size:1806K  littelfuse
mg1215h-xbn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 15A IGBT ModuleRoHSMG1215H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

Datasheet: MG100Q2YS51 , MG100Q2YS65H , MG10Q6ES50A , MG12100D-BA1MM , MG12100S-BN2MM , MG12100W-XN2MM , MG12105S-BA1MM , MG12150D-BA1MM , CRG40T60AN3H , MG12150W-XN2MM , MG12200D-BA1MM , MG12200D-BN2MM , MG12225WB-BN2MM , MG1225H-XBN2MM , MG1225H-XN2MM , MG12300D-BA1MM , MG12300D-BN2MM .

 

 
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