Справочник IGBT. MG12150S-BN2MM

 

MG12150S-BN2MM - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MG12150S-BN2MM
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 30 nS
   Qgⓘ - Общий заряд затвора, typ: 1400 nC
   Тип корпуса: MODULE

 Аналог (замена) для MG12150S-BN2MM

 

 

MG12150S-BN2MM Datasheet (PDF)

 ..1. Size:1343K  littelfuse
 mg12150s-bn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150S-BN2MMFeatures High short circuit Fast switching and short capability, self limiting tail currentshort circuit current Free wheeling diodes IGBT3 CHIP(Trench+Field with fast and soft reverse Stop technology) recovery VCE(sat) with positive Low switching lossestemperature coefficientApplicationsAg

 7.1. Size:547K  littelfuse
 mg12150d-ba1mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150D-BA1MMFeatures Ultra low loss Positive temperature coeficient High ruggedness With fast free-wheeling High short circuit diodescapabilityApplications Inverter SMPS and UPS Converter Induction heating WelderAgency ApprovalsAGENCY AGENCY FILE NUMBERE71639Module Characteristics

 7.2. Size:1452K  littelfuse
 mg12150w-xn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 150A IGBT ModuleRoHSMG12150W-XN2MM Features High level of integration Free wheeling diodes with fast and soft reverse IGBT3 CHIP(Trench+Field recoveryStop technology) Solderable pins for PCB Low saturation voltage mountingand positive temperature coefficient Temperature sense included Fast switching and short tail curr

 8.1. Size:1806K  littelfuse
 mg1215h-xbn2mm.pdf

MG12150S-BN2MM MG12150S-BN2MM

Power Module1200V 15A IGBT ModuleRoHSMG1215H-XBN2MMFeatures High level of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recoverymodule required for the Industry standard package whole drivewith insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mountingcoeff

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