MG150J2YS50 Specs and Replacement
Type Designator: MG150J2YS50
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 780 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Package: MODULE MG150J2YS50 Substitution - IGBTⓘ Cross-Reference Search
MG150J2YS50 datasheet
mg150j2ys50.pdf
MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed t = 0.30 s (Max) (I = 150A) f C t = 0.15 s (Max) (I = 150A) rr F Low saturation volta... See More ⇒
mg150j7ks60.pdf
MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P 14 3 7 11 15 4 8 12 U B V W 16 17 ... See More ⇒
mmg150j120uz6tn.pdf
MMG150J120UZ6TN 1200V 150A IGBT Module February 2017 Version 1 RoHS Compliant PRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package APPLICATIONS AC motor control Motion/servo control Inverter and power supplies IGBT A... See More ⇒
Specs: MG1250H-XN2MM, MG1250S-BA1MM, MG1250W-XBN2MM, MG1275H-XN2MM, MG1275S-BA1MM, MG1275W-XBN2MM, MG1275W-XN2MM, MG150J1BS11, RJH3047, MG150J7KS60, MG150Q2YS40, MG150Q2YS50, MG150Q2YS51, MG150Q2YS65H, MG15J6ES40, MG15Q6ES42, MG15Q6ES50A
Keywords - MG150J2YS50 transistor spec
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History: FGH40N65UFDTU
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