MG150J2YS50 Datasheet and Replacement

MG150J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 Unit: mmHigh Power Switching Applications Motor Control Applications The electrodes are isolated from case High input impedance Includes a complete half bridge in one package Enhancement-mode High speed : t = 0.30s (Max) (I = 150A) f Ct = 0.15s (Max) (I = 150A) rr F Low saturation volta

MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 (600V/150A 7in1) High Power Switching Applications Motor Control Applications Integrates inverter and brake power circuit into a single package The electrodes are isolated from case. Low thermal resistance VCE (sat) = 1.6 V (typ.) Equivalent Circuit P143 7 11154 8 12UB VW16 17

MMG150J120UZ6TN1200V 150A IGBT ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTA

MMG150J120UZ6TC1200V 150A IGBT ModuleMay 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Popular SOT-227 PackageAPPLICATIONS AC motor control Motion/servo control Inverter and power suppliesIGBTABSOLU