MG15J6ES40 Specs and Replacement
Type Designator: MG15J6ES40
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 80 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Package: MODULE MG15J6ES40 Substitution - IGBTⓘ Cross-Reference Search
MG15J6ES40 datasheet
Specs: MG1275W-XN2MM, MG150J1BS11, MG150J2YS50, MG150J7KS60, MG150Q2YS40, MG150Q2YS50, MG150Q2YS51, MG150Q2YS65H, IRGP4086, MG15Q6ES42, MG15Q6ES50A, MG15Q6ES51, MG17100D-BN4MM, MG17100S-BN4MM, MG17150D-BN4MM, MG17200D-BN4MM, MG17225WB-BN4MM
Keywords - MG15J6ES40 transistor spec
MG15J6ES40 cross reference
MG15J6ES40 equivalent finder
MG15J6ES40 lookup
MG15J6ES40 substitution
MG15J6ES40 replacement
History: FGH40T65SHD-F155 | IRG4PH50UDPBF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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