MG15Q6ES50A Datasheet and Replacement
Type Designator: MG15Q6ES50A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG15Q6ES50A substitution
MG15Q6ES50A Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , CRG15T120BNR3S , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , MG17300D-BN4MM , MG17300WB-BN4MM .
History: APTGF50X60BTP3 | SKM200GAY173D | VS-GT300YH120N | SIGC03T60SNC | IXGA30N60C3 | IXYN100N120C3H1 | BSM75GD60DLC
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History: APTGF50X60BTP3 | SKM200GAY173D | VS-GT300YH120N | SIGC03T60SNC | IXGA30N60C3 | IXYN100N120C3H1 | BSM75GD60DLC
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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