MG15Q6ES50A Datasheet and Replacement
Type Designator: MG15Q6ES50A
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Package: MODULE
- IGBT Cross-Reference
MG15Q6ES50A Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: MG150J2YS50 , MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , TGAN60N60F2DS , MG15Q6ES51 , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , MG17300D-BN4MM , MG17300WB-BN4MM .
History: SGW13N60UFD | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | JT075N120F2MA1E | APTGF50X60BTP3 | 7MBR25SA120-01
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History: SGW13N60UFD | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | JT075N120F2MA1E | APTGF50X60BTP3 | 7MBR25SA120-01
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