MG15Q6ES51 Datasheet and Replacement
Type Designator: MG15Q6ES51
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG15Q6ES51 substitution
MG15Q6ES51 Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: MG150J7KS60 , MG150Q2YS40 , MG150Q2YS50 , MG150Q2YS51 , MG150Q2YS65H , MG15J6ES40 , MG15Q6ES42 , MG15Q6ES50A , SGH80N60UFD , MG17100D-BN4MM , MG17100S-BN4MM , MG17150D-BN4MM , MG17200D-BN4MM , MG17225WB-BN4MM , MG17300D-BN4MM , MG17300WB-BN4MM , MG17450WB-BN4MM .
History: IQIB150N60B3 | IGC10R60DE | MG150Q2YS40 | IRGIB15B60KD1P | FD1600-1200R17HP4-K-B2 | MMG300D120B6TN | AOK30B65M2
Keywords - MG15Q6ES51 transistor datasheet
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History: IQIB150N60B3 | IGC10R60DE | MG150Q2YS40 | IRGIB15B60KD1P | FD1600-1200R17HP4-K-B2 | MMG300D120B6TN | AOK30B65M2
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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