MG15Q6ES51 Datasheet and Replacement
Type Designator: MG15Q6ES51
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 70 nS
Package: MODULE
MG15Q6ES51 substitution
MG15Q6ES51 Datasheet (PDF)
mg15q6es50a.pdf
This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AP28G40GEO | IRG4BC30F | IQIB150N60B3 | APTGT75X120E3
Keywords - MG15Q6ES51 transistor datasheet
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History: AP28G40GEO | IRG4BC30F | IQIB150N60B3 | APTGT75X120E3
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