MG15Q6ES51 Specs and Replacement
Type Designator: MG15Q6ES51
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Package: MODULE MG15Q6ES51 Substitution - IGBTⓘ Cross-Reference Search
MG15Q6ES51 datasheet
mg15q6es50a.pdf
This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components. ... See More ⇒
Specs: MG150J7KS60, MG150Q2YS40, MG150Q2YS50, MG150Q2YS51, MG150Q2YS65H, MG15J6ES40, MG15Q6ES42, MG15Q6ES50A, CRG15T120BNR3S, MG17100D-BN4MM, MG17100S-BN4MM, MG17150D-BN4MM, MG17200D-BN4MM, MG17225WB-BN4MM, MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM
Keywords - MG15Q6ES51 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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