MG17150D-BN4MM Specs and Replacement
Type Designator: MG17150D-BN4MM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 890 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 250 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE MG17150D-BN4MM Substitution - IGBTⓘ Cross-Reference Search
MG17150D-BN4MM datasheet
mg17150d-bn4mm.pdf
Power Module 1700V 150A IGBT Module RoHS MG17150D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con... See More ⇒
mg17100d-bn4mm.pdf
Power Module 1700V 100A IGBT Module RoHS MG17100D-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications High frequency switching Motion/servo con... See More ⇒
Specs: MG150Q2YS51, MG150Q2YS65H, MG15J6ES40, MG15Q6ES42, MG15Q6ES50A, MG15Q6ES51, MG17100D-BN4MM, MG17100S-BN4MM, YGW40N65F1, MG17200D-BN4MM, MG17225WB-BN4MM, MG17300D-BN4MM, MG17300WB-BN4MM, MG17450WB-BN4MM, MG1750S-BN4MM, MG1775S-BN4MM, MG200J2YS50
Keywords - MG17150D-BN4MM transistor spec
MG17150D-BN4MM cross reference
MG17150D-BN4MM equivalent finder
MG17150D-BN4MM lookup
MG17150D-BN4MM substitution
MG17150D-BN4MM replacement
History: MG15Q6ES51
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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