MG17300WB-BN4MM IGBT. Datasheet pdf. Equivalent
Type Designator: MG17300WB-BN4MM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1650 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 375 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Qgⓘ - Total Gate Charge, typ: 3400 nC
Package: MODULE
MG17300WB-BN4MM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MG17300WB-BN4MM Datasheet (PDF)
mg17300wb-bn4mm.pdf
Power Module1700V 300A IGBT ModuleRoHSMG17300WB-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications AC motor control Inverter and power suppli
mg17300d-bn4mm.pdf
Power Module1700V 300A IGBT ModuleRoHSMG17300D-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications High frequency switching Motion/servo con
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