MG17450WB-BN4MM Specs and Replacement
Type Designator: MG17450WB-BN4MM
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Package: MODULE MG17450WB-BN4MM Substitution - IGBT ⓘ Cross-Reference Search
MG17450WB-BN4MM datasheet
mg17450wb-bn4mm.pdf
Power Module 1700V 450A IGBT Module RoHS MG17450WB-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology) technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficient Applications AC motor control Inverter and power suppli... See More ⇒
Specs: MG15Q6ES51, MG17100D-BN4MM, MG17100S-BN4MM, MG17150D-BN4MM, MG17200D-BN4MM, MG17225WB-BN4MM, MG17300D-BN4MM, MG17300WB-BN4MM, IRGP4066D, MG1750S-BN4MM, MG1775S-BN4MM, MG200J2YS50, MG200J6ES60, MG200J6ES61, MG200Q1US41, MG200Q1US51, MG200Q2YS40
Keywords - MG17450WB-BN4MM transistor spec
MG17450WB-BN4MM cross reference
MG17450WB-BN4MM equivalent finder
MG17450WB-BN4MM lookup
MG17450WB-BN4MM substitution
MG17450WB-BN4MM replacement
History: IXSN50N60BD2
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
Popular searches
2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l | tip35 datasheet

