All IGBT. MG17450WB-BN4MM Datasheet

 

MG17450WB-BN4MM Datasheet and Replacement


   Type Designator: MG17450WB-BN4MM
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 80 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG17450WB-BN4MM Datasheet (PDF)

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MG17450WB-BN4MM

Power Module1700V 450A IGBT ModuleRoHSMG17450WB-BN4MMFeatures IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplications AC motor control Inverter and power suppli

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History: NCE30TD60BP | FD200R12PT4_B6

Keywords - MG17450WB-BN4MM transistor datasheet

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 MG17450WB-BN4MM substitution
 MG17450WB-BN4MM replacement

 

 
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