All IGBT. MG1775S-BN4MM Datasheet

 

MG1775S-BN4MM IGBT. Datasheet pdf. Equivalent


   Type Designator: MG1775S-BN4MM
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 520 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 125 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 40 nS
   Qgⓘ - Total Gate Charge, typ: 900 nC
   Package: MODULE

 MG1775S-BN4MM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MG1775S-BN4MM Datasheet (PDF)

 ..1. Size:1412K  littelfuse
 mg1775s-bn4mm.pdf

MG1775S-BN4MM MG1775S-BN4MM

Power Module1700V 75A IGBT ModuleRoHSMG1775S-BN4MM Features IGBT3 CHIP(1700V DIODE CHIP(1700V Trench+Field Stop EMCON 3 technology)technology) Free wheeling diodes Low turn-off losses, short with fast and soft reverse tail current recovery VCE(sat) with positive temperature coefficientApplicationsAgency Approvals High frequency switching

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