MG25J6ES40 Datasheet and Replacement
Type Designator: MG25J6ES40
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 100 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT ⓘ Cross-Reference Search
MG25J6ES40 Datasheet (PDF)
Datasheet: MG200J2YS50 , MG200J6ES60 , MG200J6ES61 , MG200Q1US41 , MG200Q1US51 , MG200Q2YS40 , MG200Q2YS50 , MG200Q2YS65H , GT30G122 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 , MG300J2YS40 , MG300J2YS50 .
History: IXGH40N60C
Keywords - MG25J6ES40 transistor datasheet
MG25J6ES40 cross reference
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History: IXGH40N60C
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