All IGBT. MG300J2YS50 Datasheet

 

MG300J2YS50 Datasheet and Replacement


   Type Designator: MG300J2YS50
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 150 nS
   Package: MODULE
 

 MG300J2YS50 substitution

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MG300J2YS50 Datasheet (PDF)

 ..1. Size:300K  toshiba
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MG300J2YS50

 5.1. Size:180K  toshiba
mg300j2ys40.pdf pdf_icon

MG300J2YS50

 9.1. Size:179K  toshiba
mg300n1us1.pdf pdf_icon

MG300J2YS50

 9.2. Size:83K  toshiba
mg300q2ys50.pdf pdf_icon

MG300J2YS50

MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max.) f Inductive load Low saturation voltage : V = 3.6V (Max.) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

Datasheet: MG25J6ES40 , MG25N2YS1 , MG25Q1BS11 , MG25Q2YS40 , MG25Q6ES42 , MG25Q6ES50A , MG25Q6ES51 , MG300J2YS40 , IRG4PC50U , MG300N1US1 , MG300Q1US11 , MG300Q2YS40 , MG300Q2YS50 , MG50J1BS11 , MG50J2YS50 , MG50J6ES50 , MG50Q1BS11 .

History: 2MBI300U4N-170-50

Keywords - MG300J2YS50 transistor datasheet

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