IRG4PH50UD PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

..1. Size:229K international rectifier
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PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and hi... See More ⇒

0.1. Size:681K international rectifier
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PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and higher efficiency than previous gener... See More ⇒

5.1. Size:137K international rectifier
irg4ph50u.pdf pdf_icon

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous gener... See More ⇒

6.1. Size:126K international rectifier
irg4ph50s.pdf pdf_icon

PD -91712A IRG4PH50S I T D T I T I T I T Features Features Features Features Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies ( ... See More ⇒

6.2. Size:220K international rectifier
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PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard Optimized for minimum saturation VCES =1200V voltage and low operating frequencies ( ... See More ⇒

6.3. Size:227K international rectifier
irg4ph50kd.pdf pdf_icon

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed... See More ⇒

6.4. Size:280K international rectifier
auirg4ph50s.pdf pdf_icon

AUTOMOTIVE GRADE AUIRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features IC = 81A@ TC = 100 C Standard Optimized for minimum saturation G voltage and low operating frequencies (... See More ⇒

6.5. Size:676K international rectifier
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PD- 95189 IRG4PH50KDPbF Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features C High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V , TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V G switching speed Tighter parameter distribution a... See More ⇒

6.6. Size:68K international rectifier
irg4ph50k.pdf pdf_icon

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10 s, VCC = 720V, TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distr... See More ⇒