All IGBT. MG50Q2YS50 Datasheet

 

MG50Q2YS50 Datasheet and Replacement


   Type Designator: MG50Q2YS50
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 78 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG50Q2YS50 Datasheet (PDF)

 ..1. Size:89K  toshiba
 mg50q2ys50.pdf pdf_icon

MG50Q2YS50

MG50Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3s (Max) f @Inductive load Low saturation voltage : V = 3.6V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isolated from case.

 6.1. Size:179K  toshiba
 mg50q2ys40.pdf pdf_icon

MG50Q2YS50

MG50Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q2YS40 High Power Switching Applications. Unit in mmMotor Control Applications. High input impedance High speed: tf = 0.5s (max.) trr = 0.5s (max.) Low saturation voltage : V = 4.0V (max.) CE(sat) Enhancement-mode Includes a complete half bridge in one package. The electrodes are isola

 9.1. Size:262K  toshiba
 mg50q6es40.pdf pdf_icon

MG50Q2YS50

 9.2. Size:105K  toshiba
 mg50q1bs11.pdf pdf_icon

MG50Q2YS50

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History: MG25Q6ES51 | 7MBR75U2B060

Keywords - MG50Q2YS50 transistor datasheet

 MG50Q2YS50 cross reference
 MG50Q2YS50 equivalent finder
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