MG75J1ZS40 Datasheet and Replacement
Type Designator: MG75J1ZS40
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
MG75J1ZS40 Datasheet (PDF)
mg75j1zs40.pdf

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
mg75j1bs11.pdf

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
mmg75j120uz.pdf

MMG75J120UZ1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT
Datasheet: MG50J6ES50 , MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , HGTG30N60A4 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 .
History: AP50GT60SW-HF | NCE100TD120BTP | AIKW50N65DF5 | MMG100S120UA6TC | SKM75GB063D | APTGT400U170D4 | STGF7H60DF
Keywords - MG75J1ZS40 transistor datasheet
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History: AP50GT60SW-HF | NCE100TD120BTP | AIKW50N65DF5 | MMG100S120UA6TC | SKM75GB063D | APTGT400U170D4 | STGF7H60DF



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