All IGBT. MG75J1ZS40 Datasheet

 

MG75J1ZS40 Datasheet and Replacement


   Type Designator: MG75J1ZS40
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG75J1ZS40 Datasheet (PDF)

 ..1. Size:253K  toshiba
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MG75J1ZS40

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 6.1. Size:300K  toshiba
mg75j1zs50.pdf pdf_icon

MG75J1ZS40

 8.1. Size:213K  toshiba
mg75j1bs11.pdf pdf_icon

MG75J1ZS40

This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.

 8.2. Size:445K  macmic
mmg75j120uz.pdf pdf_icon

MG75J1ZS40

MMG75J120UZ1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High Short Circuit Capability Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient Ultra Low Loss,High Ruggedness Popular SOT-227 PackageAPPLICATIONS Invertor Convertor Welder SMPS and UPS Induction HeatingIGBT

Datasheet: MG50J6ES50 , MG50Q1BS11 , MG50Q2YS40 , MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , HGTG30N60A4 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 .

History: AP50GT60SW-HF | NCE100TD120BTP | AIKW50N65DF5 | MMG100S120UA6TC | SKM75GB063D | APTGT400U170D4 | STGF7H60DF

Keywords - MG75J1ZS40 transistor datasheet

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