All IGBT. MG75J2YS50 Datasheet

 

MG75J2YS50 Datasheet and Replacement


   Type Designator: MG75J2YS50
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 390 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG75J2YS50 Datasheet (PDF)

 ..1. Size:130K  toshiba
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MG75J2YS50

 6.1. Size:192K  toshiba
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MG75J2YS50

 9.1. Size:300K  toshiba
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MG75J2YS50

 9.2. Size:512K  toshiba
mg75j6es50.pdf pdf_icon

MG75J2YS50

MG75J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : t = 0.30s (Max) (I = 75A) f C t = 0.15s (Max) (I = 75A) rr F Low saturation voltage : V = 2.70V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - MG75J2YS50 transistor datasheet

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