MG75J2YS50 PDF and Equivalents Search

 

MG75J2YS50 Specs and Replacement

Type Designator: MG75J2YS50

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 390 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Package: MODULE

 MG75J2YS50 Substitution

- IGBTⓘ Cross-Reference Search

 

MG75J2YS50 datasheet

 ..1. Size:130K  toshiba
mg75j2ys50.pdf pdf_icon

MG75J2YS50

... See More ⇒

 6.1. Size:192K  toshiba
mg75j2ys91.pdf pdf_icon

MG75J2YS50

... See More ⇒

 9.1. Size:300K  toshiba
mg75j1zs50.pdf pdf_icon

MG75J2YS50

... See More ⇒

 9.2. Size:512K  toshiba
mg75j6es50.pdf pdf_icon

MG75J2YS50

MG75J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J6ES50 Unit mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed t = 0.30 s (Max) (I = 75A) f C t = 0.15 s (Max) (I = 75A) rr F Low saturation voltage V = 2.70V... See More ⇒

Specs: MG50Q2YS40, MG50Q2YS50, MG50Q6ES40, MG50Q6ES50A, MG600Q1US51, MG75J1BS11, MG75J1ZS40, MG75J1ZS50, GT30J122, MG75J2YS91, MG75J6ES50, MG75Q1BS11, MG75Q2YS40, MG75Q2YS42, MG75Q2YS50, MG75Q2YS51, MIEB100W1200DPFTEH

Keywords - MG75J2YS50 transistor spec

 MG75J2YS50 cross reference
 MG75J2YS50 equivalent finder
 MG75J2YS50 lookup
 MG75J2YS50 substitution
 MG75J2YS50 replacement

 

 

 

 

↑ Back to Top
.