All IGBT. MG75J2YS91 Datasheet

 

MG75J2YS91 Datasheet and Replacement


   Type Designator: MG75J2YS91
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 300 nS
   Package: MODULE
 

 MG75J2YS91 substitution

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MG75J2YS91 Datasheet (PDF)

 ..1. Size:192K  toshiba
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MG75J2YS91

 6.1. Size:130K  toshiba
mg75j2ys50.pdf pdf_icon

MG75J2YS91

 9.1. Size:300K  toshiba
mg75j1zs50.pdf pdf_icon

MG75J2YS91

 9.2. Size:512K  toshiba
mg75j6es50.pdf pdf_icon

MG75J2YS91

MG75J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : t = 0.30s (Max) (I = 75A) f C t = 0.15s (Max) (I = 75A) rr F Low saturation voltage : V = 2.70V

Datasheet: MG50Q2YS50 , MG50Q6ES40 , MG50Q6ES50A , MG600Q1US51 , MG75J1BS11 , MG75J1ZS40 , MG75J1ZS50 , MG75J2YS50 , IRG4PC50W , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , MG75Q2YS42 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH .

History: APT40GP90BG

Keywords - MG75J2YS91 transistor datasheet

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