All IGBT. MG75J2YS91 Datasheet

 

MG75J2YS91 Datasheet and Replacement


   Type Designator: MG75J2YS91
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 300 nS
   Package: MODULE
      - IGBT Cross-Reference

 

MG75J2YS91 Datasheet (PDF)

 ..1. Size:192K  toshiba
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MG75J2YS91

 6.1. Size:130K  toshiba
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MG75J2YS91

 9.1. Size:300K  toshiba
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MG75J2YS91

 9.2. Size:512K  toshiba
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MG75J2YS91

MG75J6ES50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J6ES50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. 6 IGBTs built into 1 package. Enhancement-mode. High speed : t = 0.30s (Max) (I = 75A) f C t = 0.15s (Max) (I = 75A) rr F Low saturation voltage : V = 2.70V

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - MG75J2YS91 transistor datasheet

 MG75J2YS91 cross reference
 MG75J2YS91 equivalent finder
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