MG75Q2YS42 Datasheet and Replacement
Type Designator: MG75Q2YS42
Type: IGBT + Anti-Parallel Diode + Built-in Zener Diodes
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 560 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 300 nS
Package: MODULE
- IGBT Cross-Reference
MG75Q2YS42 Datasheet (PDF)
mg75q2ys50.pdf
MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3 s (Max) f @Iinductive load Low saturation voltage : V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca
Datasheet: MG75J1BS11 , MG75J1ZS40 , MG75J1ZS50 , MG75J2YS50 , MG75J2YS91 , MG75J6ES50 , MG75Q1BS11 , MG75Q2YS40 , FGPF4533 , MG75Q2YS50 , MG75Q2YS51 , MIEB100W1200DPFTEH , MIEB101W1200DPFEH , MIG10Q806H , MIG10Q806HA , MIG50Q201H , MITA150H1700TEH .
History: MMG600K170U6EN | MG200Q1US51 | MPBQ75N120BF | BLG40T65FUK-F
Keywords - MG75Q2YS42 transistor datasheet
MG75Q2YS42 cross reference
MG75Q2YS42 equivalent finder
MG75Q2YS42 lookup
MG75Q2YS42 substitution
MG75Q2YS42 replacement
History: MMG600K170U6EN | MG200Q1US51 | MPBQ75N120BF | BLG40T65FUK-F
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