MG75Q2YS51 IGBT. Datasheet pdf. Equivalent

   Type Designator: MG75Q2YS51
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 600 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: MODULE

MG75Q2YS51 Transistor Equivalent Substitute - IGBT Cross-Reference Search

MG75Q2YS51 Datasheet (PDF)

..1. Size:338K toshiba
mg75q2ys51.pdf

5.1. Size:262K toshiba
mg75q2ys50.pdf

MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Unit: mmMotor Control Applications High input impedance High speed : t = 0.3 s (Max) f @Iinductive load Low saturation voltage : V = 3.6 V (Max) CE (sat) Enhancement-mode Includes a complete half bridge in one package The electrodes are Isolated from ca

6.1. Size:114K toshiba
mg75q2ys42.pdf