All IGBT. MIXG180W1200TEH Datasheet

 

MIXG180W1200TEH Datasheet and Replacement


   Type Designator: MIXG180W1200TEH
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 935 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 280 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 60 nS
   Qgⓘ - Total Gate Charge, typ: 520 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MIXG180W1200TEH Datasheet (PDF)

 0.1. Size:385K  ixys
 mixg180w1200teh.pdf pdf_icon

MIXG180W1200TEH

MIXG180W1200TEHtentativeVCES = 1200 VX2PT IGBT ModuleIC25 = 280 AVCE(sat) = 1.7 V6-Pack + NTCPart numberMIXG180W1200TEH28, 29, 3054, 55, 56E72873T1 T3 T5D1 D3 D519 1731210 1848 42 3649 43 37NTC50 44 38D2 D4 D6T2 T4 T6325 13 216 14 2259, 60, 61 23, 24, 25Features / Advantages: Applications: Package: E3-Pack X2PT - 2nd generation Xtre

 9.1. Size:382K  ixys
 mixg120w1200teh.pdf pdf_icon

MIXG180W1200TEH

MIXG120W1200TEHtentativeVCES = 1200 VX2PT IGBT ModuleIC25 = 186 AVCE(sat) = 1.7 V6-Pack + NTCPart numberMIXG120W1200TEH28, 29, 3054, 55, 56E72873T1 T3 T5D1 D3 D519 1731210 1848 42 3649 43 37NTC50 44 38D2 D4 D6T2 T4 T6325 13 216 14 2259, 60, 61 23, 24, 25Features / Advantages: Applications: Package: E3-Pack X2PT - 2nd generation Xtre

Datasheet: MIXA60HU1200VA , MIXA60WH1200TEH , MIXA81WB1200TEH , MIXD200W650TEH , MIXD50W650TED , MIXD600PF650TSF , MIXD80PM650TMI , MIXG120W1200TEH , IKW75N60T , MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , MSAGA11F120D , MUBW30-12A6 , NXH80T120L2Q0 .

History: IXXH100N60B3

Keywords - MIXG180W1200TEH transistor datasheet

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