All IGBT. MSAGA11F120D Datasheet

 

MSAGA11F120D IGBT. Datasheet pdf. Equivalent


   Type Designator: MSAGA11F120D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 11 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: DIE

 MSAGA11F120D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MSAGA11F120D Datasheet (PDF)

 ..1. Size:145K  microsemi
 msaga11f120d.pdf

MSAGA11F120D MSAGA11F120D

2830 S. Fairview StreetSanta Ana, CA 92704MSAGA11F120DPhone: (714) 979-8220Fast IGBT Die for ImplantableFax: (714) 559-5989Cardio DefibrillatorApplications DESCRIPTION: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.55 Collect

Datasheet: MIXD80PM650TMI , MIXG120W1200TEH , MIXG180W1200TEH , MIXG240W1200TEH , MP6750 , MP6752 , MP6753 , MP6757 , YGW40N65F1 , MUBW30-12A6 , NXH80T120L2Q0 , NXH80T120L2Q0PG , PDMB200E6 , PM100CBS060 , PM15CMA060 , PM25CL1A120 , PS21265-AP .

 

 
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