All IGBT. MSAGA11F120D Datasheet

 

MSAGA11F120D Datasheet and Replacement


   Type Designator: MSAGA11F120D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 125 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 11 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: DIE
      - IGBT Cross-Reference

 

MSAGA11F120D Datasheet (PDF)

 ..1. Size:145K  microsemi
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MSAGA11F120D

2830 S. Fairview StreetSanta Ana, CA 92704MSAGA11F120DPhone: (714) 979-8220Fast IGBT Die for ImplantableFax: (714) 559-5989Cardio DefibrillatorApplications DESCRIPTION: N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.55 Collect

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300D120B6TC

Keywords - MSAGA11F120D transistor datasheet

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