MSAGA11F120D PDF and Equivalents Search

 

MSAGA11F120D Specs and Replacement

Type Designator: MSAGA11F120D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 125 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 11 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.1 V @25℃

tr ⓘ - Rise Time, typ: 120 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: DIE

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MSAGA11F120D datasheet

 ..1. Size:145K  microsemi
 msaga11f120d.pdf pdf_icon

MSAGA11F120D

2830 S. Fairview Street Santa Ana, CA 92704 MSAGA11F120D Phone (714) 979-8220 Fast IGBT Die for Implantable Fax (714) 559-5989 Cardio Defibrillator Applications DESCRIPTION N-Channel enhancement mode high density IGBT die Passivation Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization Al/1%Si for aluminum wire bonding, 3.2 um typical. 55 Collect... See More ⇒

Specs: MIXD80PM650TMI, MIXG120W1200TEH, MIXG180W1200TEH, MIXG240W1200TEH, MP6750, MP6752, MP6753, MP6757, MBQ50T65FDSC, MUBW30-12A6, NXH80T120L2Q0, NXH80T120L2Q0PG, PDMB200E6, PM100CBS060, PM15CMA060, PM25CL1A120, PS21265-AP

Keywords - MSAGA11F120D transistor spec

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