2PG011 IGBT. Datasheet pdf. Equivalent
Type Designator: 2PG011
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 40
Maximum Collector-Emitter Voltage |Vce|, V: 540
Collector-Emitter saturation Voltage |Vcesat|, V: 1.95
Maximum Gate-Emitter Voltage |Veg|, V: 30
Maximum Collector Current |Ic|, A: 40
Maximum Junction Temperature (Tj), °C: 150
Rise Time, nS: 610
Maximum Collector Capacity (Cc), pF: 125
Package: TO220D-A1
2PG011 Transistor Equivalent Substitute - IGBT Cross-Reference Search
2PG011 Datasheet (PDF)
0.1. 2pg011.pdf Size:481K _1
This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG011Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



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IGBT: FGL40N120AND | FGA40N65SMD | MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170