All IGBT. 2PG011 Datasheet

 

2PG011 Datasheet and Replacement


   Type Designator: 2PG011
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 540 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 610 nS
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO220D-A1
 

 2PG011 substitution

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2PG011 Datasheet (PDF)

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2PG011

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG011Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

Datasheet: IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , TGPF30N43P , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B .

History: RJH30E2DPP

Keywords - 2PG011 transistor datasheet

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