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2PG011 PDF Specs and Replacement


   Type Designator: 2PG011
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 40 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 540 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   tr ⓘ - Rise Time, typ: 610 nS
   Coesⓘ - Output Capacitance, typ: 125 pF
   Package: TO220D-A1
 

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2PG011 PDF specs

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2PG011

This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Package Low collector-emitter saturation voltage VCE(sat) ... See More ⇒

Specs: IXBH15N170 , IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , TGAN20N135FD , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B .

History: YGF20N65T2

Keywords - 2PG011 transistor spec

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