All IGBT. 2PG011 Datasheet

 

2PG011 IGBT. Datasheet pdf. Equivalent

Type Designator: 2PG011

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 40

Maximum Collector-Emitter Voltage |Vce|, V: 540

Collector-Emitter saturation Voltage |Vcesat|, V: 1.95

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 610

Maximum Collector Capacity (Cc), pF: 125

Package: TO220D-A1

2PG011 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2PG011 Datasheet (PDF)

0.1. 2pg011.pdf Size:481K _1

2PG011 2PG011

This product complies with the RoHS Directive (EU 2002/95/EC).IGBT 2PG011Silicon N-channel enhancement IGBTFor plasma display panel driveFor high speed switching circuits Features Package Low collector-emitter saturation voltage: VCE(sat)

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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