BT60N60ANF Datasheet and Replacement
Type Designator: BT60N60ANF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 110 nS
Coesⓘ - Output Capacitance, typ: 310 pF
Package: TO3P
BT60N60ANF substitution
BT60N60ANF Datasheet (PDF)
bt60n60anf.pdf
R BT60N60 ANF BT60N60 ANF FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 300 W VCE(sat) 2.2 V TO-3PN FS
Datasheet: IXBH9N140 , IXBH9N160 , IXBT15N170 , FGH40T65SHDF_F155 , FGPF30N45TTU , IGF40T120F , MBQ40T65FDSC , 2PG011 , GT30G122 , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MM15G3T120B , MM20G3R135B .
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