BT60N60ANF Datasheet and Replacement
Type Designator: BT60N60ANF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 110 nS
Coesⓘ - Output Capacitance, typ: 310 pF
Qg ⓘ - Total Gate Charge, typ: 150 nC
Package: TO3P
BT60N60ANF substitution
BT60N60ANF Datasheet (PDF)
bt60n60anf.pdf
R BT60N60 ANF BT60N60 ANF FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 300 W VCE(sat) 2.2 V TO-3PN FS
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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