BT60N60ANF Datasheet. Specs and Replacement

Type Designator: BT60N60ANF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 110 nS

Coesⓘ - Output Capacitance, typ: 310 pF

Package: TO3P

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BT60N60ANF datasheet

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BT60N60ANF

R BT60N60 ANF BT60N60 ANF FS IGBT VCES 600 V IC 60 A RoHS Ptot TC=25 300 W VCE(sat) 2.2 V TO-3P N FS ... See More ⇒

Specs: IXBH9N140, IXBH9N160, IXBT15N170, FGH40T65SHDF_F155, FGPF30N45TTU, IGF40T120F, MBQ40T65FDSC, 2PG011, SGP30N60, GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, MM15G3T120B, MM20G3R135B

Keywords - BT60N60ANF transistor spec

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