MM120G3T65BM Specs and Replacement

Type Designator: MM120G3T65BM

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 60 nS

Package: TO247PLUS

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MM120G3T65BM datasheet

 ..1. Size:337K  macmic
 mm120g3t65bm.pdf pdf_icon

MM120G3T65BM

MM120G3T65BM 650V 120A IGBT June 2020 Version 01 RoHS Compliant PRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS Motor control 1.Gate UPS/PFC 2.Collector 3.Emitter... See More ⇒

 9.1. Size:702K  way-on
 wmm120p06ts.pdf pdf_icon

MM120G3T65BM

WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = -60V, I = -120A DS D R ... See More ⇒

 9.2. Size:665K  way-on
 wmm120n04ts.pdf pdf_icon

MM120G3T65BM

WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET Description WMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. G S Features TO-263 V = 40V, I = 170A DS D R ... See More ⇒

Specs: MBQ40T65FDSC, 2PG011, BT60N60ANF, GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, AOK40B65H2AL, MM15G3T120B, MM20G3R135B, MM20G3T135B, MM25G3T120B, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX

Keywords - MM120G3T65BM transistor spec

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