MM120G3T65BM Datasheet and Replacement
Type Designator: MM120G3T65BM
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 60 nS
Qg ⓘ - Total Gate Charge, typ: 550 nC
Package: TO247PLUS
MM120G3T65BM substitution
MM120G3T65BM Datasheet (PDF)
mm120g3t65bm.pdf

MM120G3T65BM650V 120A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES 650V IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS Motor control1.Gate UPS/PFC2.Collector3.Emitter
wmm120p06ts.pdf

WMM120P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMM120P06TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = -60V, I = -120A DS DR
wmm120n04ts.pdf

WMM120N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionWMM120N04TS uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. GSFeatures TO-263 V = 40V, I = 170A DS DR
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: RJP30E3DPP-M0
Keywords - MM120G3T65BM transistor datasheet
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History: RJP30E3DPP-M0



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