MM15G3T120B Specs and Replacement

Type Designator: MM15G3T120B

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 200 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 26 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Package: TO247

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MM15G3T120B datasheet

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MM15G3T120B

MM15G3T120B 1200V 15A IGBT November 2019 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical ap... See More ⇒

Specs: 2PG011, BT60N60ANF, GT50N324, MGD622, FGA40N65SMD, FGL40N120AND, MM10G3T120B, MM120G3T65BM, NGTB75N65FL2, MM20G3R135B, MM20G3T135B, MM25G3T120B, MM25G3U120BX, MM40G3T120B, MM40G3U120B, MM40G3U120BX, MM40G3U65B

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