All IGBT. MM15G3T120B Datasheet

 

MM15G3T120B Datasheet and Replacement


   Type Designator: MM15G3T120B
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 200 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 26 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Package: TO247
      - IGBT Cross-Reference

 

MM15G3T120B Datasheet (PDF)

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MM15G3T120B

MM15G3T120B1200V 15A IGBTNovember 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical ap

Datasheet: 2PG011 , BT60N60ANF , GT50N324 , MGD622 , FGA40N65SMD , FGL40N120AND , MM10G3T120B , MM120G3T65BM , MGD623S , MM20G3R135B , MM20G3T135B , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B .

History: KGF15N120NDS | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | MMG100Q120B6TN | IXGA30N60C3 | CRG05T60A44S-G

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