MM50G3T120BM IGBT. Datasheet pdf. Equivalent
Type Designator: MM50G3T120BM
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 535 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 83 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 28 nS
Package: TO247PLUS
MM50G3T120BM Transistor Equivalent Substitute - IGBT Cross-Reference Search
MM50G3T120BM Datasheet (PDF)
mm50g3t120bm.pdf
MM50G3T120BM1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli
mm50g3u120bmx.pdf
MM50G3U120BMX1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appl
mm50g120l.pdf
MM50G120L 1200V 50A IGBT February 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat)1 2 To-264 3 APPLICATIONS High frequency switching application Medical applications 1.Gate
Datasheet: MM20G3T135B , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , RJP6065DPM , MM50G3U120BMX , MM60G3U65B , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN , MMG100J120U6HN .
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