MM50G3T120BM Даташит. Аналоги. Параметры и характеристики.
Наименование: MM50G3T120BM
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 535 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 83 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 28 nS
Qg ⓘ - Общий заряд затвора, typ: 270 nC
Тип корпуса: TO247PLUS
Аналог (замена) для MM50G3T120BM
MM50G3T120BM Datasheet (PDF)
mm50g3t120bm.pdf

MM50G3T120BM1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appli
mm50g3u120bmx.pdf

MM50G3U120BMX1200V 50A IGBTJune 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery123APPLICATIONS High frequency switching application1.Gate Medical appl
mm50g120l.pdf

MM50G120L 1200V 50A IGBT February 2013 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery V with positive temperature coefficient CE(sat)1 2 To-264 3 APPLICATIONS High frequency switching application Medical applications 1.Gate
Другие IGBT... MM20G3T135B , MM25G3T120B , MM25G3U120BX , MM40G3T120B , MM40G3U120B , MM40G3U120BX , MM40G3U65B , MM40G3U65BN , FGH30S130P , MM50G3U120BMX , MM60G3U65B , MM75G3T65B , MMG100D170B , MMG100D170B6TC , MMG100H120H6HN , MMG100HB060B6EN , MMG100J120U6HN .
History: IGW60T120
History: IGW60T120



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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