MMG100W060XB6EN IGBT. Datasheet pdf. Equivalent
Type Designator: MMG100W060XB6EN
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 330
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 125
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 20
Total Gate Charge (Qg), typ, nC: 1100
Package: MODULE
MMG100W060XB6EN Transistor Equivalent Substitute - IGBT Cross-Reference Search
MMG100W060XB6EN Datasheet (PDF)
mmg100w060xb6en.pdf
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mmg100wd120xb6tc.pdf
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mmg100wd120xb6t4n.pdf
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mmg100w120x6tc.pdf
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mmg100w120xb6t4n.pdf
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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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