Справочник IGBT. MMG100W060XB6EN

 

MMG100W060XB6EN - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MMG100W060XB6EN
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 330 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 125 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 20 nS
   Тип корпуса: MODULE

 Аналог (замена) для MMG100W060XB6EN

 

 

MMG100W060XB6EN Datasheet (PDF)

 0.1. Size:232K  macmic
mmg100w060xb6en.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100W060XB6EN600V 100A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop

 3.1. Size:202K  macmic
mmg100w060x6en.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100W060X6EN600V 100A Six-Pack ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES IGBT3 Chip(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Indus

 7.1. Size:372K  macmic
mmg100w120x6tn.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100W120X6TN1200V 100A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fr

 7.2. Size:1625K  macmic
mmg100wd120xt6tc.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100WD120XT6TC1200V 100A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insu

 7.3. Size:1531K  macmic
mmg100wd120xb6tc.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100WD120XB6TC1200V 100A PIM ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

 7.4. Size:433K  macmic
mmg100wd120xb6t4n.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100WD120XB6T4N1200V 100A PIM ModuleMarch 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current Fre

 7.5. Size:1596K  macmic
mmg100w120x6tc.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100W120X6TC1200V 100A Six-Pack ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

 7.6. Size:271K  macmic
mmg100w120xb6t4n.pdf

MMG100W060XB6EN MMG100W060XB6EN

MMG100W120XB6T4N1200V 100A PIM ModuleFebruary 2015 Version 0 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT4 Trench+Field Stop technology)Diode Chip(Emcon4 wheeling diode) High level of integrationonly one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short tail current F

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