All IGBT. MMG400K120U6HN Datasheet

 

MMG400K120U6HN Datasheet and Replacement


   Type Designator: MMG400K120U6HN
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 75 nS
   Qgⓘ - Total Gate Charge, typ: 1900 nC
   Package: MODULE
      - IGBT Cross-Reference

 

MMG400K120U6HN Datasheet (PDF)

 ..1. Size:445K  macmic
mmg400k120u6hn.pdf pdf_icon

MMG400K120U6HN

MMG400K120U6HN1200V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo

 2.1. Size:296K  macmic
mmg400k120u6un.pdf pdf_icon

MMG400K120U6HN

MMG400K120U6UN 1200V 400A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 5K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE MAX

 2.2. Size:451K  macmic
mmg400k120u6tn.pdf pdf_icon

MMG400K120U6HN

MMG400K120U6TN1200V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses

 6.1. Size:211K  macmic
mmg400k170u6en.pdf pdf_icon

MMG400K120U6HN

MMG400K170U6EN1700V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery 5K Gate Protected Resistance InsideAPP

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - MMG400K120U6HN transistor datasheet

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