MMG400K120U6HN Даташит. Аналоги. Параметры и характеристики.
Наименование: MMG400K120U6HN
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 2000 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 600 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.1 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 75 nS
Qg ⓘ - Общий заряд затвора, typ: 1900 nC
Тип корпуса: MODULE
Аналог (замена) для MMG400K120U6HN
MMG400K120U6HN Datasheet (PDF)
mmg400k120u6hn.pdf

MMG400K120U6HN1200V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lo
mmg400k120u6un.pdf

MMG400K120U6UN 1200V 400A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability Positive Temperature Coefficient With Fast Free-Wheeling Diodes 5K Gate Protected Resistance Inside APPLICATIONS Inverter Convertor Welder SMPS and UPS Induction Heating ABSOLUTE MAX
mmg400k120u6tn.pdf

MMG400K120U6TN1200V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses
mmg400k170u6en.pdf

MMG400K170U6EN1700V 400A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery 5K Gate Protected Resistance InsideAPP
Другие IGBT... MMG35HD120XB6TC , MMG35HD120XT6TC , MMG400D060B6TC , MMG400D060DE6EN , MMG400D120B6BHN , MMG400D120B6TC , MMG400D120UA6TC , MMG400D120UK6HN , XNF15N60T , MMG400VB065X6EN , MMG400VB065X6TC , MMG40H120XB6TC , MMG40H120XT6TC , MMG40S120B6UC , MMG40W120XB6TN , MMG450D120B6TC , MMG450D120B6TN .
History: IXEN60N120D1 | MMG100DR120B
History: IXEN60N120D1 | MMG100DR120B



Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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