IXDH20N120 Datasheet and Replacement
Type Designator: IXDH20N120
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Qg ⓘ - Total Gate Charge, typ: 70 nC
Package: TO247
IXDH20N120 substitution
IXDH20N120 Datasheet (PDF)
ixdh20n120.pdf
IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V
ixdh20n120d1.pdf
IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V
Datasheet: IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , RJH60F5DPQ-A0 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 .
Keywords - IXDH20N120 transistor datasheet
IXDH20N120 cross reference
IXDH20N120 equivalent finder
IXDH20N120 lookup
IXDH20N120 substitution
IXDH20N120 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sc461 | hy1906 | 2sc2238 | 2sc458 transistor | b649a transistor | 2sa606 | 2n3644 | 2sc2240bl