IXDH20N120 Datasheet and Replacement
Type Designator: IXDH20N120
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 38 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
- IGBT Cross-Reference
IXDH20N120 Datasheet (PDF)
ixdh20n120.pdf
IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V
ixdh20n120d1.pdf
IXDH 20N120 VCES = 1200 VHigh Voltage IGBTIXDH 20N120 D1 IC25 = 38 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilitySquare RBSOAC CTO-247 ADG GGCC (TAB)EE EG = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1C = Collector , TAB = CollectorSymbol Conditions Maximum Ratings FeaturesNPT IGBT technologyVCES TJ = 25C to 150C 1200 V
Datasheet: IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , GT30F125 , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 .
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
Keywords - IXDH20N120 transistor datasheet
IXDH20N120 cross reference
IXDH20N120 equivalent finder
IXDH20N120 lookup
IXDH20N120 substitution
IXDH20N120 replacement
History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL
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