IXDH20N120 Specs and Replacement
Type Designator: IXDH20N120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 38 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
tr ⓘ - Rise Time, typ: 75 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO247
IXDH20N120 Substitution - IGBT ⓘ Cross-Reference Search
IXDH20N120 datasheet
ixdh20n120.pdf
IXDH 20N120 VCES = 1200 V High Voltage IGBT IXDH 20N120 D1 IC25 = 38 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability Square RBSOA C C TO-247 AD G G G C C (TAB) E E E G = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V ... See More ⇒
ixdh20n120d1.pdf
IXDH 20N120 VCES = 1200 V High Voltage IGBT IXDH 20N120 D1 IC25 = 38 A with optional Diode VCE(sat) typ = 2.4 V Short Circuit SOA Capability Square RBSOA C C TO-247 AD G G G C C (TAB) E E E G = Gate, E = Emitter IXDH 20N120 IXDH 20N120 D1 C = Collector , TAB = Collector Symbol Conditions Maximum Ratings Features NPT IGBT technology VCES TJ = 25 C to 150 C 1200 V ... See More ⇒
Specs: IRG4ZH70UD , IRG4ZH71KD , IRGBC20S , IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , TGAN60N60F2DS , IXDH20N120D1 , IXDH30N120 , IXDH30N120AU1 , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 .
Keywords - IXDH20N120 transistor spec
IXDH20N120 cross reference
IXDH20N120 equivalent finder
IXDH20N120 lookup
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