IXDH30N120AU1 IGBT. Datasheet pdf. Equivalent
Type Designator: IXDH30N120AU1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 250 pF
Qgⓘ - Total Gate Charge, typ: TBD nC
Package: TO247
IXDH30N120AU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXDH30N120AU1 Datasheet (PDF)
ixdh30n120au1 ixdt30n120au1.pdf
High Voltage IGBTIXDH 30N120AU1 VCES = 1200 VIXDT 30N120AU1 IC25 = 50 Awith DiodeVCE(sat) typ = 2.5 VShort Circuit SOA CapabilityPreliminary DataSymbol Test Conditions Maximum Ratings TO-247 AD (IXDH)VCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VC (TAB)GVGES Continuous 20 VCEVGEM Transient 30 VTO-268 AA (IXDT)IC25 TC = 25C5
ixdh30n120.pdf
IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V
ixdh30n120d1.pdf
IXDH 30N120IXDH 30N120 D1VCES = 1200 VHigh Voltage IGBTIC25 = 60 Awith optional DiodeVCE(sat) typ = 2.4 VShort Circuit SOA CapabilityC CSquare RBSOA TO-247 AD (IXDH)G GGCC (TAB)E EEIXDH 30N120 IXDH 30N120 D1 G = Gate, E = EmitterC = Collector , TAB = CollectorSymbol Conditions Maximum Ratings Features NPT IGBT technologyVCES TJ = 25C to 150C 1200 V
ixdh30n120 ixdt30n120 ixdh30n120d1 ixdt30n120d1.pdf
IXDH 30N120VCES = 1200 VHigh Voltage IGBTIXDH 30N120 D1IC25 = 60 Awith optional DiodeIXDT 30N120VCE(sat) typ = 2.4 VIXDT 30N120 D1Short Circuit SOA CapabilityC CSquare RBSOATO-247 AD (IXDH)G GE EGCC (TAB)IXDH 30N120 IXDH 30N120 D1EIXDT 30N120 IXDT 30N120 D1TO--268 AA (IXDT)Symbol Conditions Maximum RatingsGVCES TJ = 25C to 150C 1200 VEC (T
Datasheet: IRGBC30S , IRGBC40S , IRGS14B40L , IRGS14C40L , IXDA20N120AS , IXDH20N120 , IXDH20N120D1 , IXDH30N120 , MBQ50T65FESC , IXDH30N120D1 , IXDN50N120AU1 , IXDN55N120 , IXDN55N120D1 , IXDN75N120 , IXDT30N120 , IXDT30N120AU1 , IXDT30N120D1 .
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