JT015N065FED IGBT. Datasheet pdf. Equivalent
Type Designator: JT015N065FED
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 31
Maximum Collector-Emitter Voltage |Vce|, V: 650
Collector-Emitter saturation Voltage |Vcesat|, V: 1.6
Maximum Gate-Emitter Voltage |Veg|, V: 20
Maximum Collector Current |Ic|, A: 30
Maximum Junction Temperature (Tj), °C: 150
Package: TO220MF
JT015N065FED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT015N065FED Datasheet (PDF)
..1. jt015n065fed.pdf Size:300K _jilin_sino
N N-CHANNEL IGBT RJT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,
Datasheet: MMGT50W120X6C , MMGT50W120XB6C , MMGT75H120X6C , MMGT75W120X6C , MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , RJH60F7DPQ-A0 , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 .



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IGBT: NGTG15N60S1EG | NGTB40N65FL2WG | NGTB40N120L3WG | NGTB25N120FL3WG | NGTB15N60S1EG | NGTB15N135IHRWG | NGTB10N60R2DT4G | NGTB05N60R2DT4G | NGTB03N60R2DT4G | ISL9V5045S3ST-F085 | ISL9V5045S3