2M410B1 Datasheet. Specs and Replacement

Type Designator: 2M410B1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1700 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.5 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Coesⓘ - Output Capacitance, typ: 500 pF

Package: MODULE

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2M410B1 datasheet

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Specs: MMGT75W120X6C, MMGT75W120XB6C, MMGT75WD120XB6C, MMGTU75J120U, FGA25S125P, JT015N065FED, 2M410A, 2M410B, IKW40T120, 2M410V, 2M410V1, 2M410G, CI20T120P, IHW15N120E1, RJH3044, XNF15N60T, YGW60N65F1A1

Keywords - 2M410B1 transistor spec

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