All IGBT. 2M410V Datasheet

 

2M410V IGBT. Datasheet pdf. Equivalent


   Type Designator: 2M410V
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 2М410В
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 900 pF
   Package: MODULE

 2M410V Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2M410V Datasheet (PDF)

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 2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf

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 2m410v.pdf

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 2m410v1.pdf

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 2m410b1.pdf

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 2m410a.pdf

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 2m410b.pdf

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 2m410g.pdf

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Datasheet: MMGT75W120XB6C , MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , MBQ50T65FESC , 2M410V1 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN .

 

 
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