All IGBT. 2M410V1 Datasheet

 

2M410V1 Datasheet and Replacement


   Type Designator: 2M410V1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 900 pF
   Package: MODULE
 

 2M410V1 substitution

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2M410V1 Datasheet (PDF)

 ..1. Size:227K  1
2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf pdf_icon

2M410V1

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 ..2. Size:227K  russia
2m410v1.pdf pdf_icon

2M410V1

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 8.1. Size:227K  russia
2m410v.pdf pdf_icon

2M410V1

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 9.1. Size:227K  russia
2m410b1.pdf pdf_icon

2M410V1

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Datasheet: MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , MGD623S , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 .

Keywords - 2M410V1 transistor datasheet

 2M410V1 cross reference
 2M410V1 equivalent finder
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