All IGBT. 2M410V1 Datasheet

 

2M410V1 IGBT. Datasheet pdf. Equivalent

Type Designator: 2M410V1

Type: IGBT

Marking Code: 2М410В1

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 500

Maximum Collector-Emitter Voltage |Vce|, V: 1200

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 100

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.8

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 400

Collector Capacity (Cc), typ, pF: 900

Package: MODULE

2M410V1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2M410V1 Datasheet (PDF)

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 2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf

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 2m410v1.pdf

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 2m410v.pdf

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 2m410b1.pdf

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 2m410g.pdf

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 2m410b.pdf

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 2m410a.pdf

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , HCKZ75N65BH2 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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