2M410V1 PDF and Equivalents Search

 

2M410V1 Specs and Replacement

Type Designator: 2M410V1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃

tr ⓘ - Rise Time, typ: 400 nS

Coesⓘ - Output Capacitance, typ: 900 pF

Package: MODULE

 2M410V1 Substitution

- IGBT ⓘ Cross-Reference Search

 

2M410V1 datasheet

 ..1. Size:227K  1
2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf pdf_icon

2M410V1

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2M410V1

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2M410V1

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2M410V1

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Specs: MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , IHW40T60 , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 .

History: BLG10T65FUL-D

Keywords - 2M410V1 transistor spec

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