All IGBT. 2M410V1 Datasheet

 

2M410V1 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2M410V1
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 2М410В1
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 900 pF
   Package: MODULE

 2M410V1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2M410V1 Datasheet (PDF)

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 2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf

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 2m410v1.pdf

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 2m410v.pdf

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 2m410b1.pdf

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 2m410a.pdf

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 2m410b.pdf

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 2m410g.pdf

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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