All IGBT. 2M410V1 Datasheet

 

2M410V1 IGBT. Datasheet pdf. Equivalent


   Type Designator: 2M410V1
   Type: IGBT
   Marking Code: 2М410В1
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 400
   Collector Capacity (Cc), typ, pF: 900
   Package: MODULE

 2M410V1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

2M410V1 Datasheet (PDF)

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 2m410a 2m410b 2m410b1 2m410v 2m410v1 2m410g.pdf

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 2m410v1.pdf

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 2m410v.pdf

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 2m410b1.pdf

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 2m410a.pdf

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 2m410b.pdf

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 2m410g.pdf

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Datasheet: MMGT75WD120XB6C , MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , CRG75T60AK3HD , 2M410G , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 .

 

 
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