2M410G Datasheet and Replacement
Type Designator: 2M410G
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
2M410G substitution
2M410G Datasheet (PDF)
Datasheet: MMGTU75J120U , FGA25S125P , JT015N065FED , 2M410A , 2M410B , 2M410B1 , 2M410V , 2M410V1 , FGL60N100BNTD , CI20T120P , IHW15N120E1 , RJH3044 , XNF15N60T , YGW60N65F1A1 , SGT60N60FD1PN , SGT60N60FD1P7 , FGH40T120SMD .
History: MMGT50W120XB6C | DF600R12IP4D | MMG40S120B6UC | IRGB4610D | PS21265-AP
Keywords - 2M410G transistor datasheet
2M410G cross reference
2M410G equivalent finder
2M410G lookup
2M410G substitution
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History: MMGT50W120XB6C | DF600R12IP4D | MMG40S120B6UC | IRGB4610D | PS21265-AP
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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