2M410G Datasheet. Specs and Replacement
Type Designator: 2M410G 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
tr ⓘ - Rise Time, typ: 400 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
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2M410G Substitution
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2M410G datasheet
Specs: MMGTU75J120U, FGA25S125P, JT015N065FED, 2M410A, 2M410B, 2M410B1, 2M410V, 2M410V1, XNF15N60T, CI20T120P, IHW15N120E1, RJH3044, XNF15N60T, YGW60N65F1A1, SGT60N60FD1PN, SGT60N60FD1P7, FGH40T120SMD
Keywords - 2M410G transistor spec
2M410G cross reference
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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