All IGBT. 2M410G Datasheet

 

2M410G Datasheet and Replacement


   Type Designator: 2M410G
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 2М410Г
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 400 nS
   Coesⓘ - Output Capacitance, typ: 500 pF
   Package: MODULE
 

 2M410G substitution

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2M410G Datasheet (PDF)

 ..1. Size:227K  1
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2M410G

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 ..2. Size:227K  russia
2m410g.pdf pdf_icon

2M410G

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 9.1. Size:227K  russia
2m410v.pdf pdf_icon

2M410G

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 9.2. Size:227K  russia
2m410b1.pdf pdf_icon

2M410G

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: NGTB30N65IHL2WG | 2MBI300TA-060

Keywords - 2M410G transistor datasheet

 2M410G cross reference
 2M410G equivalent finder
 2M410G lookup
 2M410G substitution
 2M410G replacement

 

 
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