FGH50T65SQD IGBT. Datasheet pdf. Equivalent

April 2016FGH50T65SQD650 V, 50 A Field Stop Trench IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using novel field stop IGBT technology, Fairchilds new series offield stop 4th generation IGBTs offer the optimum performance Positive Temperaure Co-efficient for Easy Parallel Operatingfor solar inverter, UPS, welder, telecom, ESS and PFC applica-

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

IGBT - Field Stop, Trench650 V, 50 AFGH50T65UPDDescriptionUsing innovative field stop trench IGBT technology,ON Semiconductors new series of field-stop trench IGBTs offerwww.onsemi.comoptimum performance for solar inverter, UPS, welder, and digitalpower generator where low conduction and switching losses areCessential.Features Maximum Junction Temperature: TJ = 175

IGBT - SMPS II SeriesN-Channel withAnti-Parallel Stealth Diode600 VFGH50N6S2Dwww.onsemi.comDescriptionThe FGH50N6S2D is a Low Gate Charge, Low Plateau VoltageSMPS II IGBT combining the fast switching speed of the SMPSCIGBTs along with lower gate charge, plateau voltage and avalanchecapability (UIS). These LGC devices shorten delay times, and reducethe power requirement o

July 2002FGH50N6S2D600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM DiodeGeneral Description FeaturesThe FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40AVoltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25Aof the SMPS IGBTs along with lower gate charge, plateauvoltage and avalanche capability (UIS)

July 2002FGH50N3300V, PT N-Channel IGBTGeneral Description FeaturesThe FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .

IGBT - SMPS 300 VFGH50N3DescriptionUsing ON Semiconductors planar technology, this IGBT is idealfor many high voltage switching applications operating at highwww.onsemi.comfrequencies where low conduction losses are essential. This device hasbeen optimized for medium frequency switch mode power supplies.FeaturesC Low Saturation Voltage: VCE(sat) = 1.4 V Max Low