FGH50T65SQD - Даташиты. Аналоги. Основные параметры

April 2016 FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT Features General Description Maximum Junction Temperature TJ =175oC Using novel field stop IGBT technology, Fairchild s new series of field stop 4th generation IGBTs offer the optimum performance Positive Temperaure Co-efficient for Easy Parallel Operating for solar inverter, UPS, welder, telecom, ESS and PFC applica-

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

IGBT - Field Stop, Trench 650 V, 50 A FGH50T65UPD Description Using innovative field stop trench IGBT technology, ON Semiconductor s new series of field-stop trench IGBTs offer www.onsemi.com optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are C essential. Features Maximum Junction Temperature TJ = 175

IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V FGH50N6S2D www.onsemi.com Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS C IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement o

July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS)

July 2002 FGH50N3 300V, PT N-Channel IGBT General Description Features The FGH50N3 is a MOS gated high voltage switching Low VCE(SAT) . . . . . . . . . . . . . . . . . . .

IGBT - SMPS 300 V FGH50N3 Description Using ON Semiconductor s planar technology, this IGBT is ideal for many high voltage switching applications operating at high www.onsemi.com frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies. Features C Low Saturation Voltage VCE(sat) = 1.4 V Max Low