All IGBT. GPU150HF120D2 Datasheet

 

GPU150HF120D2 IGBT. Datasheet pdf. Equivalent


   Type Designator: GPU150HF120D2
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 735 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 300 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 92 nS
   Coesⓘ - Output Capacitance, typ: 1800 pF
   Qgⓘ - Total Gate Charge, typ: 1300 nC
   Package: MODULE

 GPU150HF120D2 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GPU150HF120D2 Datasheet (PDF)

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 gpu150hf120d2.pdf

GPU150HF120D2 GPU150HF120D2

GPU150HF120D2IGBT Module 1200V/150A 2 in one-package Features 1200V150A,V =3.2V@150A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 62mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications. Absolut

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