GPU50HF120D1 Datasheet and Replacement
Type Designator: GPU50HF120D1
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 277 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 513 pF
Package: MODULE
GPU50HF120D1 substitution
GPU50HF120D1 Datasheet (PDF)
gpu50hf120d1.pdf
GPU50HF120D1 GPU50HF120D1IGBT Module 1200V/50A 2 in one-package Features 1200V50A,V =3.2V@50A CE(sat)(typ.) Ultrafast switching speed Excellent short circuit ruggednesss 34mm half bridge module General Description Daxins IGBTs offer ultrafast switching speed for application such as welding, inductive- heating, UPS and other high frequency applications
Datasheet: SGT60T65FD1P7 , SGT60T65FD1PS , SGT60T65FD1PT , GPK100HF120D1 , GPK200HF120D2 , GPU100HF120D1 , GPU150HF120D2 , GPU200HF120D2 , HGTG30N60A4 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D .
History: JNG25T120HFU1
Keywords - GPU50HF120D1 transistor datasheet
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History: JNG25T120HFU1
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