HMG15N60 Datasheet and Replacement
Type Designator: HMG15N60
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 105 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 61 pF
Package: TO220
HMG15N60 substitution
HMG15N60 Datasheet (PDF)
hmg15n60 hmg15n60d hmg15n60f.pdf
HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching
Datasheet: GPU200HF120D2 , GPU50HF120D1 , GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , KGF75N65KDF , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A .
History: IXGR72N60A3
Keywords - HMG15N60 transistor datasheet
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History: IXGR72N60A3
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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