All IGBT. HMG15N60D Datasheet

 

HMG15N60D Datasheet and Replacement


   Type Designator: HMG15N60D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 105 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 61 pF
   Qgⓘ - Total Gate Charge, typ: 75 nC
   Package: TO263
      - IGBT Cross-Reference

 

HMG15N60D Datasheet (PDF)

 ..1. Size:2018K  cn hmsemi
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HMG15N60D

HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IGA03N120H2 | IXGQ50N60C4D1 | IXGH24N60B | IXGQ20N120B | IGW40N60H3 | HGTG18N120BND

Keywords - HMG15N60D transistor datasheet

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