HMG15N60F Specs and Replacement
Type Designator: HMG15N60F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 35 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 61 pF
Package: TO220F
HMG15N60F Substitution - IGBT ⓘ Cross-Reference Search
HMG15N60F datasheet
Specs: GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , GT30F124 , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 .
Keywords - HMG15N60F transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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