All IGBT. HMG15N60F Datasheet

 

HMG15N60F IGBT. Datasheet pdf. Equivalent


   Type Designator: HMG15N60F
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 61 pF
   Package: TO220F

 HMG15N60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HMG15N60F Datasheet (PDF)

 ..1. Size:2018K  cn hmsemi
 hmg15n60 hmg15n60d hmg15n60f.pdf

HMG15N60F HMG15N60F

HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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