All IGBT. HMG15N60F Datasheet

 

HMG15N60F IGBT. Datasheet pdf. Equivalent


   Type Designator: HMG15N60F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 35
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 18
   Collector Capacity (Cc), typ, pF: 61
   Total Gate Charge (Qg), typ, nC: 75
   Package: TO220F

 HMG15N60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HMG15N60F Datasheet (PDF)

 ..1. Size:2018K  cn hmsemi
 hmg15n60 hmg15n60d hmg15n60f.pdf

HMG15N60F HMG15N60F

HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching

Datasheet: GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , GT30F124 , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 .

 

 
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