HMG15N60F Datasheet and Replacement
Type Designator: HMG15N60F
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 35 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 61 pF
Package: TO220F
HMG15N60F substitution
HMG15N60F Datasheet (PDF)
hmg15n60 hmg15n60d hmg15n60f.pdf
HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching
Datasheet: GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , GT30F124 , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 .
History: FF100R12RT4 | SGTP40V60FD2PU
Keywords - HMG15N60F transistor datasheet
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History: FF100R12RT4 | SGTP40V60FD2PU
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