All IGBT. HMG15N60F Datasheet

 

HMG15N60F Datasheet and Replacement


   Type Designator: HMG15N60F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 35 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 61 pF
   Qgⓘ - Total Gate Charge, typ: 75 nC
   Package: TO220F
      - IGBT Cross-Reference

 

HMG15N60F Datasheet (PDF)

 ..1. Size:2018K  cn hmsemi
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HMG15N60F

HMG15N60D/HMG15N60/HMG15N60F600V, 15A, Trench FS II IGBTGeneral Description:Using 's proprietary trench design and advanced FS (field stop)second generation technology, the 600V Trench FS II IGBT offers superiorconduction and switching performances, and easy parallel operation;FeaturesTrench FSII Technology offering Very low VCEsat High speed switching

Datasheet: GPU75HF120D1 , HM15N120A , HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , GT30F124 , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 .

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