HMG20N65F Datasheet and Replacement
Type Designator: HMG20N65F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 37 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 27 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Qgⓘ - Total Gate Charge, typ: 79 nC
Package: TO220F
- IGBT Cross-Reference
HMG20N65F Datasheet (PDF)
hmg20n65f.pdf
HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val
hmg20n60a.pdf
HMG20N60A20A600V C 2HMG20N60A Field 1GStop UPS,SMPS PFC 3E 20A600VVCE(sat)( )=2.0V@IC=20A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: HGT1S14N36G3VLS | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | GT8N101 | IXGH32N60AU1S | IRGPS46160D
Keywords - HMG20N65F transistor datasheet
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History: HGT1S14N36G3VLS | IXGT15N120BD1 | STGB30H60DF | 1MBI400HH-120L-50 | GT8N101 | IXGH32N60AU1S | IRGPS46160D
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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