All IGBT. HMG20N65F Datasheet

 

HMG20N65F IGBT. Datasheet pdf. Equivalent


   Type Designator: HMG20N65F
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 37 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 79 nC
   Package: TO220F

 HMG20N65F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HMG20N65F Datasheet (PDF)

 ..1. Size:1097K  cn hmsemi
hmg20n65f.pdf

HMG20N65F
HMG20N65F

HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val

 7.1. Size:627K  cn hmsemi
hmg20n60a.pdf

HMG20N65F
HMG20N65F

HMG20N60A20A600V C 2HMG20N60A Field 1GStop UPS,SMPS PFC 3E 20A600VVCE(sat)( )=2.0V@IC=20A

Datasheet: HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , GT30J124 , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H .

 

 
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