HMG20N65F PDF and Equivalents Search

 

HMG20N65F Specs and Replacement

Type Designator: HMG20N65F

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 37 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 130 pF

Package: TO220F

 HMG20N65F Substitution

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HMG20N65F datasheet

 ..1. Size:1097K  cn hmsemi
 hmg20n65f.pdf pdf_icon

HMG20N65F

HMG20N65F IGBT Features 650V 20A,V = 1.70 V@20A CE(sat)(typ.) Field Stop IGBT Technology. 10 s Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Benefits High Efficiency for Motor Control. Rugged Performance. Excellent Current Sharing in Parallel Operation Absolute Maxinmun Ratings Symbol Parameter Val... See More ⇒

 7.1. Size:627K  cn hmsemi
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HMG20N65F

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Specs: HM20N120AB , HM20N120T , HM20N120TB , HM25N120T , HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , FGH40N60UFD , HMG40N60A , HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H .

History: IXGH28N30B

Keywords - HMG20N65F transistor spec

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