HMG60N60A Datasheet. Specs and Replacement

Type Designator: HMG60N60A  📄📄 

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 321 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V

tr ⓘ - Rise Time, typ: 142 nS

Coesⓘ - Output Capacitance, typ: 294 pF

Qg ⓘ - Total Gate Charge, typ: 179 nC

Package: TO3P

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HMG60N60A datasheet

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HMG60N60A

HMG60N60A/HMG60N60T 60A 600V C 2 HMG60N60A/HMG60N60T 1 G Field Stop UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A 12 12 ... See More ⇒

Specs: HMG15N60, HMG15N60D, HMG15N60F, HMG20N60A, HMG20N65F, HMG40N60A, HMG40N60T, HMG40N65T, FGH60N60SMD, HMG60N60T, KDG25R12KE3, KDG40R12KT3, CRG60T60AN3H, FGPF70N33BT, MBQ40T65QES, SSG55N60M, SSG55N60Z

Keywords - HMG60N60A transistor spec

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