HMG60N60A Datasheet and Replacement
Type Designator: HMG60N60A
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 142 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Qg ⓘ - Total Gate Charge, typ: 179 nC
Package: TO3P
HMG60N60A substitution
HMG60N60A Datasheet (PDF)
hmg60n60a hmg60n60t.pdf
HMG60N60A/HMG60N60T60A600V C 2HMG60N60A/HMG60N60T 1GField StopUPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A 1212
Datasheet: HMG15N60 , HMG15N60D , HMG15N60F , HMG20N60A , HMG20N65F , HMG40N60A , HMG40N60T , HMG40N65T , MBQ60T65PES , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z .
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