MBQ40T65QES Datasheet. Specs and Replacement

Type Designator: MBQ40T65QES  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

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MBQ40T65QES datasheet

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MBQ40T65QES

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert... See More ⇒

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 mbq40t65fdsc.pdf pdf_icon

MBQ40T65QES

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000... See More ⇒

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 mbq40t120fds.pdf pdf_icon

MBQ40T65QES

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de... See More ⇒

 8.2. Size:1275K  magnachip
 mbq40t120fes.pdf pdf_icon

MBQ40T65QES

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de... See More ⇒

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Specs: HMG40N60T, HMG40N65T, HMG60N60A, HMG60N60T, KDG25R12KE3, KDG40R12KT3, CRG60T60AN3H, FGPF70N33BT, GT30J124, SSG55N60M, SSG55N60Z, SSG55N60N, SSG55N60P, YGW40N65F1, AOD5B65M1, AOTF15B65M1, CRG15T120BNR3S

Keywords - MBQ40T65QES transistor spec

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