All IGBT. MBQ40T65QES Datasheet

 

MBQ40T65QES Datasheet and Replacement


   Type Designator: MBQ40T65QES
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40T65QES
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 230 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qg ⓘ - Total Gate Charge, typ: 60 nC
   Package: TO247
 

 MBQ40T65QES substitution

   - IGBT ⓘ Cross-Reference Search

 

MBQ40T65QES Datasheet (PDF)

 ..1. Size:711K  1
mbq40t65qes.pdf pdf_icon

MBQ40T65QES

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert

 6.1. Size:1591K  1
mbq40t65fdsc.pdf pdf_icon

MBQ40T65QES

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

 8.1. Size:1272K  1
mbq40t120fds.pdf pdf_icon

MBQ40T65QES

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de

 8.2. Size:1275K  magnachip
mbq40t120fes.pdf pdf_icon

MBQ40T65QES

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

Datasheet: HMG40N60T , HMG40N65T , HMG60N60A , HMG60N60T , KDG25R12KE3 , KDG40R12KT3 , CRG60T60AN3H , FGPF70N33BT , FGH60N60SMD , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , AOTF15B65M1 , CRG15T120BNR3S .

History: 2MBI300VH-120-50 | VS-GB90DA60U

Keywords - MBQ40T65QES transistor datasheet

 MBQ40T65QES cross reference
 MBQ40T65QES equivalent finder
 MBQ40T65QES lookup
 MBQ40T65QES substitution
 MBQ40T65QES replacement

 

 
Back to Top

 


 
.