MBQ40T65QES - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: MBQ40T65QES

Маркировка: 40T65QES

Тип управляющего канала: N

Максимальная рассеиваемая мощность (Pc): 230

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 650

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.8

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 80

Максимальная температура перехода (Tj): 150

Время нарастания: 36

Емкость коллектора (Cc), pf: 120

Тип корпуса: TO247

Аналог (замена) для MBQ40T65QES

MBQ40T65QES Datasheet (PDF)

..1. mbq40t65qes.pdf Size:711K _1

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert

6.1. mbq40t65fdsc.pdf Size:1591K _1

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

8.1. mbq40t120fes.pdf Size:1275K _magnachip

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

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