MBQ40T65QES Даташит. Аналоги. Параметры и характеристики.
Наименование: MBQ40T65QES
Тип транзистора: IGBT + Diode
Маркировка: 40T65QES
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 230 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.8 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 36 nS
Coesⓘ - Выходная емкость, типовая: 120 pF
Qg ⓘ - Общий заряд затвора, typ: 60 nC
Тип корпуса: TO247
Аналог (замена) для MBQ40T65QES
MBQ40T65QES Datasheet (PDF)
mbq40t65qes.pdf

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert
mbq40t65fdsc.pdf

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000
mbq40t120fds.pdf

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de
mbq40t120fes.pdf

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



Список транзисторов
Обновления
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