AOTF15B65M1 PDF and Equivalents Search

 

AOTF15B65M1 Specs and Replacement

Type Designator: AOTF15B65M1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 36 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 96 pF

Package: TO220F

 AOTF15B65M1 Substitution

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AOTF15B65M1 datasheet

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 aotf15b65m1.pdf pdf_icon

AOTF15B65M1

AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien... See More ⇒

 4.1. Size:572K  aosemi
 aotf15b65m3.pdf pdf_icon

AOTF15B65M1

AOTF15B65M3 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci... See More ⇒

 4.2. Size:587K  aosemi
 aotf15b65mq1.pdf pdf_icon

AOTF15B65M1

AOTF15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒

 4.3. Size:1205K  aosemi
 aotf15b65m2.pdf pdf_icon

AOTF15B65M1

AOTF15B65M2 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒

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Specs: FGPF70N33BT , MBQ40T65QES , SSG55N60M , SSG55N60Z , SSG55N60N , SSG55N60P , YGW40N65F1 , AOD5B65M1 , RJP30H1DPD , CRG15T120BNR3S , GPU200HF120D2SE , RCF1565SL1 , RCP1565SL1 , RCB1565SL1 , RCD1565SL1 , KGF65A6H , MGF65A6H .

Keywords - AOTF15B65M1 transistor spec

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